To invest KRW 20 trillion by 2028 to build advanced research facility
Samsung Electronics today broke ground for a new semiconductor research and development complex in Giheung, Korea, aiming to extend its leadership in state-of-the-art semiconductor technology.
Samsung Electronics plans to invest about KRW 20 trillion by 2028 for the complex in an area covering about 109,000 square meters within its Giheung campus. The new facility will lead advanced research on next-generation devices and processes for memory and system semiconductors, as well as development of innovative new technologies based on a long-term roadmap.
Today’s groundbreaking ceremony was attended by Samsung Electronics Vice Chairman Jay Y. Lee, President and CEO Kye Hyun Kyung, President of the Memory Business Jung-Bae Lee, President of the Foundry Business Siyoung Choi and President of the S.LSI Business Yong-In Park, along with more than 100 employees.
“Our new state-of-the-art R&D complex will become a hub for innovation where the best research talent from around the world can come and grow together,” said President Kye Hyun Kyung, who also heads the Device Solutions (DS) Division. “We expect this new beginning will lay the foundation for sustainable growth of our semiconductor business.”
With the establishment of the new R&D facility, Samsung Electronics is seeking to overcome the limits of semiconductor scaling and solidify its competitive edge in semiconductor technology.
Samsung Electronics’ Giheung campus, located south of Seoul near the DS Division’s Hwaseong campus, is the birthplace of the world’s first 64Mb DRAM in 1992, marking the beginning of the company’s semiconductor leadership.
The new Giheung R&D facility, together with the R&D line in Hwaseong and the world’s largest semiconductor production complex in Pyeongtaek, is also expected to elevate the synergy among Samsung’s three main semiconductor complexes in the metropolitan area.
After the ceremony, Vice Chairman Jay Y. Lee visited the Hwaseong campus to meet with employees of the DS Division, where they discussed ways to promote innovation within the company. At a separate meeting with executives of the DS Division, discussions involved current issues in the global semiconductor industry, progress of next-generation semiconductor technology R&D and ways to secure technology to expand semiconductor leadership.